国际简称:IEEE T DEVICE MAT RE 参考译名:IEEE Transactions on Device and Materials Reliability
主要研究方向:工程技术-工程:电子与电气 非预警期刊 审稿周期: 较慢,6-12周
《IEEE Transactions on Device and Materials Reliability》(Ieee Transactions On Device And Materials Reliability)是一本由Institute of Electrical and Electronics Engineers Inc.出版的以工程技术-工程:电子与电气为研究特色的国际期刊,发表该领域相关的原创研究文章、评论文章和综述文章,及时报道该领域相关理论、实践和应用学科的最新发现,旨在促进该学科领域科学信息的快速交流。该期刊是一本未开放期刊,近三年没有被列入预警名单。
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
CiteScore | SJR | SNIP | CiteScore 指数 | ||||||||||||||||
4.8 | 0.436 | 1.148 |
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名词解释:CiteScore 是衡量期刊所发表文献的平均受引用次数,是在 Scopus 中衡量期刊影响力的另一个指标。当年CiteScore 的计算依据是期刊最近4年(含计算年度)的被引次数除以该期刊近四年发表的文献数。例如,2022年的 CiteScore 计算方法为:2022年的 CiteScore =2019-2022年收到的对2019-2022年发表的文件的引用数量÷2019-2022年发布的文献数量 注:文献类型包括:文章、评论、会议论文、书籍章节和数据论文。
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 3区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 | 3区 3区 |
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 3区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 | 3区 3区 |
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 3区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 | 3区 3区 |
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 4区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 | 4区 4区 |
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 3区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 | 3区 3区 |
Top期刊 | 综述期刊 | 大类学科 | 小类学科 | ||
否 | 否 | 工程技术 | 3区 | PHYSICS, APPLIED 物理:应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 | 3区 4区 |
按JIF指标学科分区 | 收录子集 | 分区 | 排名 | 百分位 |
学科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q2 | 165 / 352 |
53.3% |
学科:PHYSICS, APPLIED | SCIE | Q2 | 87 / 179 |
51.7% |
按JCI指标学科分区 | 收录子集 | 分区 | 排名 | 百分位 |
学科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 186 / 354 |
47.6% |
学科:PHYSICS, APPLIED | SCIE | Q3 | 99 / 179 |
44.97% |
Author: eexdhuang
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016.
Author: xjli
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016.
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