Journal Of Computational Electronics SCIE

国际简称：J COMPUT ELECTRON 参考译名：计算电子学杂志

主要研究方向：ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED 非预警期刊审稿周期： 12周，或约稿

《计算电子学杂志》(Journal Of Computational Electronics)是一本由Springer US出版的以ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED为研究特色的国际期刊，发表该领域相关的原创研究文章、评论文章和综述文章，及时报道该领域相关理论、实践和应用学科的最新发现，旨在促进该学科领域科学信息的快速交流。该期刊是一本未开放期刊，近三年没有被列入预警名单。

4区中科院分区
Q3 JCR分区
117 年发文量
2.2 IF影响因子
未开放 是否OA
27 H-index
2002 创刊年份
6 issues per year 出版周期
English 出版语言

he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.

In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.

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Journal Of Computational Electronics期刊信息

ISSN：1569-8025
出版语言：English
是否OA：未开放
E-ISSN：1572-8137
出版地区：UNITED STATES
是否预警：否
出版商：Springer US
出版周期：6 issues per year
创刊时间：2002
开源占比：0.0676
Gold OA文章占比：8.61%
OA被引用占比：0.025
出版国人文章占比：0.08
出版撤稿占比：0.0053...
研究类文章占比：100.00%

Journal Of Computational Electronics CiteScore评价数据（2024年最新版）

CiteScore

SJR

SNIP

CiteScore 指数

4.5

0.294

0.824

学科类别	分区	排名	百分位
大类：Mathematics 小类：Modeling and Simulation	Q2	89 / 324	72%
大类：Mathematics 小类：Electrical and Electronic Engineering	Q2	295 / 797	63%
大类：Mathematics 小类：Atomic and Molecular Physics, and Optics	Q2	91 / 224	59%
大类：Mathematics 小类：Electronic, Optical and Magnetic Materials	Q2	121 / 284	57%

名词解释：CiteScore 是衡量期刊所发表文献的平均受引用次数，是在 Scopus 中衡量期刊影响力的另一个指标。当年CiteScore 的计算依据是期刊最近4年（含计算年度）的被引次数除以该期刊近四年发表的文献数。例如，2022年的 CiteScore 计算方法为：2022年的 CiteScore =2019-2022年收到的对2019-2022年发表的文件的引用数量÷2019-2022年发布的文献数量注：文献类型包括：文章、评论、会议论文、书籍章节和数据论文。

Journal Of Computational Electronics中科院评价数据

中科院 2023年12月升级版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

中科院 2022年12月升级版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

中科院 2021年12月旧的升级版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

中科院 2021年12月基础版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

中科院 2021年12月升级版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

中科院 2020年12月旧的升级版

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	4区 4区

Journal Of Computational Electronics JCR评价数据（2023-2024年最新版）

按JIF指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	183 / 352	48.2%
学科：PHYSICS, APPLIED	SCIE	Q3	104 / 179	42.2%

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	190 / 354	46.47%
学科：PHYSICS, APPLIED	SCIE	Q3	100 / 179	44.41%

Journal Of Computational Electronics历年数据统计

影响因子

中科院分区

Journal Of Computational Electronics中国学者发文选摘

1、Exploring the electrical performance of advanced and environmental-friendly novel nanomaterial wires in generator winding through finite element analysis
Author: Hassan, Atazaz; Chen Quanfang; Abbas, Sajid; Akbar, Hussain; Luo Youming; Liu Jie

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 17-28. DOI: 10.1007/s10825-022-01965-y
2、Ab-initio characterization of iron-embedded nitrogen-doped graphene as a toxic gas sensor
Author: Nosheen, Uzma; Jalil, Abdul; Ilyas, Syed Zafar; Ahmed, Sarfraz; Illahi, Ahsan; Rafiq, Muhammad Aftab

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 116-127. DOI: 10.1007/s10825-022-01977-8
3、Efficient modeling approach for simulating multi-physics responses of an ion-sensitive field-effect transistor using artificial neural networks
Author: Xie, Jianan; Zhou, Yuanguo; Liang, Bingyang; Ren, Qiang; Javaid, Fawad

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 242-249. DOI: 10.1007/s10825-022-01979-6
4、Critical parameters of gate control in NC-FinFET on GaAs
Author: Li, Henghui; Jia, Tingting; Zhang, Chong; Yu, Ziwei; Guo, Quansheng; Zhao, Hongyang; Jia, Chunyang; Yu, Shuhui; Sun, Rong

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 164-177. DOI: 10.1007/s10825-022-01957-y
5、Velocity-field characteristics of MgxZn1-xO/ZnO heterostructures
Author: Liu, DongFeng

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 603-611. DOI: 10.1007/s10825-022-01999-2
6、Storm surge level prediction based on improved NARX neural network
Author: Li, Lianbo; Wu, Wenhao; Zhang, Wenjun; Zhu, Zhenyu; Li, Zhengqian; Wang, Yihan; Niu, Sen

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 783-804. DOI: 10.1007/s10825-023-02005-z
7、Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities
Author: Wang, Yunyan; Huo, Yiping; Cui, Pengfei; Song, Meina; Zhao, Chen; Liao, Zuxiong; Liu, Tong; Zhang, Zhongyue; Xie, You

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 3, pp. 839-848. DOI: 10.1007/s10825-023-02022-y
8、Nonlocalization of singular potentials in quantum dynamics
Author: Shao, Sihong; Su, Lili

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. , Issue , pp. -. DOI: 10.1007/s10825-023-02042-8